Dear Dennis,
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Thank you so very much for such an insightful and beautiful explanation. I will be under your debt forever. I have a follow-up query though and it is as follows:
You mention>> "I think I should point out that the pulse duration is not important for this test in a simulation. It is important for real parts that dissipate power during the test to ensure they do not overheat."
I forgot to write the reason behind why I want to do this simulation. The thing is I want to know the exact gate charge at my operating condition (a particular value of VGS and VDS), so that I can calculate the Rg needed in the gate drive circuit to run my hardware.
Similarly, I also want to learn how I may obtain Eon and Eoff values for any particular MOSFET so that I may design the snubber circuit accurately and do the converter efficiency analysis in PLECS. It asks for these values (Eon and Eoff).
Further, I tried to look for open source simulation examples on how to find reverse recovery losses of any diode, however, I was unable to find anything on this.
I would be grateful if you may teach me these things too.
With regards,
Ankit
