Internally-matched power transistors use the internal bond wires as high-Q inductive elements. In conjunction with MOS capacitors they are used to build matching networks inside the package to bring the sub- to few-Ohm transistor impedances to something more manageable, or in some cases directly to 50 Ohm, at the device leads. The number of wires and their length, height and spacing determine their values, so are tweaked for tuning.
The devices' parasitic capacitances are absorbed into the matching network, making a useful element out of what was a hindrance.
73, Don N2VGU
Donald S Brant Jr