? ? "Does this imply that I can turn a suitable enhancement mode N-chan VDMOS into a depletion mode device by just inverting VTO?"
I think that depends on what you mean by "suitable".
? ? "Sounds so easy ;-) !"? You know what they say -- if it sounds too easy, it probably is.
Certainly the value of the Vto parameter (along with whether it's an N or P channel device) defines whether a MOSFET is enhancement or depletion mode, since that is more or less the definition of the electrical difference between them.? If the MOSFET conducts when Vgs=0, then it's a depletion-mode MOSFET.? If it doesn't conduct at Vgs=0, then a gate voltage is needed to form a conducting channel and it is an enhancement-mode MOSFET.
Having a SPICE model for a depletion model MOSFET doesn't mean there is a part made that matches the model.? Kludging up another transistor's model might need more than one tweak to make it semi-realistic.? The presence/absence of a physical channel probably means some significant changes otherwise to the model.
I'd recommend choosing a part number of a few popular deplstion mode MOSFETs, then see if there are LTspice models for them.